Aluminum nitride materials and members for use in the production of semiconductors

ABSTRACT

An object of the present invention is to provide a novel aluminum nitride material of aluminum nitride base and having a low volume resistivity at room temperature. An aluminum nitride material has aluminum nitride as a main component and europium in a content of 0.03 mole percent or more calculated as the oxide, and the material has aluminum nitride and an europium-aluminum composite oxide phases. Alternatively, an aluminum nitride material has aluminum nitride as a main component and europium and samarium in a total content of 0.09 mole percent or more calculated as the oxides, and the material has aluminum nitride phase and a composite oxide phase containing at least europium and aluminum.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The invention relates to an aluminum nitride material and a member for use in the production of semiconductors.

[0003] 2. Related Art Statement

[0004] An electrostatic chuck system utilizing Johnson-Rahbek effect is useful for the adsorption and retention of semiconductor wafers. In such system, the volume resistivity of the substrate of the chuck may preferably be 10⁸ to 10¹³ Ω·cm for improving adsorption force and speed of response. It is therefore desirable to control the volume resistivity of the substrate within 10⁸ to 10¹³ Ω·cm in a temperature range intended for use, in the development of an electrostatic chuck.

[0005] For example, the assignee filed Japanese patent publication 9-315, 867A and disclosed a method of adding a trace amount of yttrium oxide into aluminum nitride having a high purity to control the volume resistivity at room temperature at a value between 10⁸ to 10¹³ Ω·cm.

[0006] The assignee has further filed U.S. Patent publication 2002-0110709A1 and disclosed an aluminum nitride sintered body containing samarium in a content of 0.04 mole percent or more to generate continuous samarium-aluminum oxide phase, so that the body has a volume resistivity of 10¹² Ω·cm or lower at room temperature.

SUMMARY OF THE INVENTION

[0007] The effects of the addition of rare earth elements other than yttrium to an aluminum nitride sintered body is not described in Japanese patent publication 9-315, 867A. According to an aluminum nitride sintered body described in U.S. Patent publication 2002-0110709A1, it is necessary to increase the content of samarium to 0.04 mole percent or higher calculated as the oxide for realizing a volume resistivity of about 10¹² Ω·cm at room temperature. As the content of samarium is higher, the volume resistivity at room temperature lowers.

[0008] An object of the present invention is to provide a novel aluminum nitride based material having a low volume resistivity at room temperature.

[0009] A first aspect of the present invention provides an aluminum nitride material comprising aluminum nitride as a main component and europium in a content of 0.03 mole percent or more calculated as the oxide (Eu₂O₃). The material has aluminum nitride and europium-aluminum composite oxide phases.

[0010] A second aspect of the present invention provides an aluminum nitride material comprising aluminum nitride as a main component and europium and samarium in a total content of 0.09 mole percent or more calculated as the oxides. The material has aluminum nitride phase and a composite oxide phase containing at least europium and aluminum.

[0011] The inventors have found that the volume resistivity of an aluminum nitride material can be reduced by adding a predetermined amount of europium in the material to generate a composite oxide phase containing europium and aluminum.

[0012] The inventors have further found that the volume resistivity of an aluminum nitride material can be reduced by adding predetermined amounts of europium and samarium in the material to generate a composite oxide phase containing at least europium and aluminum. It is further proved that the dependency of the volume resistivity of the material on an applied voltage can be reduced.

[0013] In U.S. Patent publication 2002-0110709A1, it is described that europium is listed as an additive when samarium is added to the material in an amount of 0.04 mole percent or more (calculated as the oxide). It is, however, not described to add europium in an amount of 0.03 mole percent calculated as the oxide to generate a composite oxide phase containing europium and aluminum.

BRIEF DESCRIPTION OF THE DRAWINGS

[0014]FIG. 1 is a phase diagram of Eu₂O₃—Al₂O₃ system.

[0015]FIG. 2 shows a X-ray diffraction profile of a sample according to an example 6.

[0016]FIG. 3 shows a X-ray diffraction profile of a sample according to an example 11.

[0017]FIG. 4 is a back scattering image taken by a scanning electron microscope of a sample according to an example 6.

[0018]FIG. 5 shows results of analysis of elements by EPMA over the same visual field as FIG. 4.

[0019]FIG. 6 shows a photograph taken by an atomic force microscope (AFM) showing a current distribution analytic image of a sample according to an example 6.

[0020]FIG. 7 is a back scattering image taken by a scanning electron microscope of a sample according to an example 11.

[0021]FIG. 8 shows results of analysis of elements by EPMA over the same visual field as FIG. 7.

[0022]FIG. 9 is a graph showing the dependency of current on applied voltage and results of fitting using method of least squares of an example 5.

[0023]FIG. 10 is a graph showing the dependency of current on applied voltage and results of fitting using method of least squares of an example 11.

PREFERRED EMBODIMENTS

[0024] The aluminum nitride material may preferably be an aluminum nitride sintered body. The content of aluminum in the aluminum nitride material should be enough for forming aluminum nitride grains as the main phase. The content may preferably be not lower than 35 weight percent, and more preferably be not lower than 50 weight percent, of the material.

[0025] According to the first aspect of the present invention, the content of europium calculated as the oxide is 0.03 mole percent or higher. The content may preferably be 0.05 mole percent or higher, and more preferably be 0.1 mole percent or higher, for reducing the volume resistivity. Further, the content of europium calculated as the oxide may preferably be 10 mole percent or lower, and more preferably be 5 mole percent or lower, for improving the thermal conductivity of the aluminum nitride material.

[0026] According to the first aspect of the present invention, the molar ratio of the content of europium calculated as the oxide to that of alumina (Eu₂O₃/Al₂O₃) may preferably be 0.2 or lower. The voltage-current property can be made more ohmic. More preferably, (Eu₂O₃/Al₂O) is 0.090 or lower. It is thus possible to reduce α value to 1.6 or lower, and more preferably 1.4 or lower in a voltage range of 50 V/mm to 500 V/mm, provided that I=kV^(α). “V” represents a voltage applied on the material, “I” represents a leakage current when a voltage of “V” is applied on the material, “k” represents a constant and α represents a non linear index. From the viewpoint of reducing α value, (Eu₂O₃/Al₂O₃) may more preferably be 0.075 or lower.

[0027] Further the lower limit of (Eu₂O₃/Al₂O₃) is not particularly defined, and may normally be 0.03 or higher. When (Eu₂O₃/Al₂O₃) is lower than 0.03, the volume resistivity tends to be increased.

[0028] According to the second aspect of the present invention, a total of the contents of europium and samarium is 0.09 mole percent or higher. The total of the contents calculated as the oxides may preferably be 0.15 mole percent or higher and more preferably be 0.3 mole percent or higher, for reducing the volume resistivity. Further, from the viewpoint of improving the thermal conductivity of the aluminum nitride material, a total of the contents of europium and samarium calculated as the oxides may preferably be 10 mole percent or lower, and more preferably be 5 mole percent or lower.

[0029] In the second aspect of the present invention, the molar ratio of the contents of europium to samarium calculated as the oxides in raw material (Eu₂O₃/Sm₂O) may preferably be 0.2 or higher. It is thus possible to reduce a value at 1.4 or lower. For further reducing a (for making the dependency of the volume resistivity on applied voltage more ohmic), (Eu₂O₃/Sm₂O₃) may preferably be 0.6 or higher, more preferably 1.0 or higher, and most preferably 1.5 or higher.

[0030] The contents of europium and samarium calculated as the oxides are calculated as Eu₂O₃, Sm₂O₃ based on the chemical analysis values of europium and samarium contained in an aluminum nitride material. The oxygen contents in Eu₂O₃ and Sm₂O₃ are subtracted from the total oxygen content in the sintered body to calculate the remaining oxygen. The content of Al₂O₃ is calculated under the provision that all the remaining oxygen atoms constitute Al₂O₃.

[0031] “α” will be described further in detail. In an aluminum nitride sintered body described in Japanese patent publication 9-315, 867A, it is possible to reduce the volume resistivity. It is proved that, however, such sintered body shows a non-linear relationship between voltage and current that the change of leak current largely depends on the change of an applied voltage. Specifically, “α” is proved to be as high as 1.5 to 2.0, provided that I=kV^(α) where “V” represents a voltage applied on the material, “I” represents a leakage current when a voltage of “V” is applied, “k” represents a constant and “α” represents a non linear index.

[0032] Such non-ohmic voltage-current behavior is not desirable for a member for use in a system for producing semiconductors, such as a semiconductor susceptor embedding an electrostatic chuck electrode. For example, in a case of a ceramic electrostatic chuck, a dielectric layer is provided between the electrostatic chuck electrode and the surface. The thickness of the dielectric layer is not constant and has some degree of deviation or change. The voltage applied between the electrode and surface is constant at the same time. The applied electric field (V/mm) is smaller in a region where the dielectric layer is thicker, and the field is larger in a region where the dielectric layer is thinner. When the leakage current shows non-ohmic behavior according to the change of the applied voltage, the deviation of the leakage current on the surface becomes larger so that the adsorption force becomes unstable. The aluminum nitride material of the present invention may exhibit an extremely low α and ohmic resistance property depending on the conditions.

[0033] In a preferred embodiment, the aluminum nitride material has a volume resistivity at room temperature of 10¹³ Ω·cm or lower, and possibly 10¹² Ω·cm or lower, at an applied voltage of 500 V/mm.

[0034] In a preferred embodiment of the first and second aspects, the europium-aluminum composite oxide phase has network-like microstructure. That is, the europium-aluminum composite oxide phase is continuously formed between aluminum nitride grains so that the phase surrounds the grains to form fine network like structure.

[0035] The mean grain diameter of aluminum nitride grains in the material is not particularly limited, and may preferably be 3 μm or larger and more preferably be 5 μm or larger. The mean grain diameter may preferably be 20 μm or smaller.

[0036] The aluminum nitride material according to the first aspect of the present invention contains an europium-aluminum composite oxide phase. Although the specific composition of the europium-aluminum composite oxide phase is not limited, the phase may preferably include each or both of EuAl₁₁O₁₈ and EuAl₁₂O₁₉ phases. These crystalline phases have peak tops in a range of 18.5 to 19.0° in an X-ray diffraction chart. The material may contain the other crystalline phases such as EuAl₂O₄ and Al₅O₆N phases.

[0037] The aluminum nitride material according to the second aspect of the present invention contains a composite oxide phase containing at least europium and aluminum. The composite oxide phase may be an europium-aluminum composite oxide phase or an europium-samarium-aluminum composite oxide phase. Although the specific composition of the europium-aluminum composite oxide phase is not limited, the phase may be EuAl₁₁O₁₈ or EuAl₁₂O₁₉ phase. Although the specific composition of the europium-samarium-aluminum composite oxide phase is not limited, the phase may be (Re)Al₁₁O₁₈ or (Re)Al₁₂O₁₉ phase (Re represents Eu and Sm). The material may further includes a samarium-aluminum composite oxide phase in addition to the europium-aluminum composite oxide and europium-samarium-aluminum composite oxide phases. These crystalline phases have peak tops in a range of 18.5 to 19.0° in an X-ray diffraction chart. The aluminum nitride material may further include the other crystalline phases such as EuAl₂O₄, SmAlO₃ and Al₅O₆N phases.

[0038] The relative density of the aluminum nitride material may preferably be 95% or higher.

[0039] The aluminum nitride material may contain a rare earth element other than samarium and europium. Such additional elements include scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium and lutetium.

[0040] The raw material of aluminum nitride may be produced by various processes, including direct nitriding, reduction nitriding and gaseous phase synthesis from an alkyl aluminum.

[0041] Materials of europium and samarium are added to aluminum nitride raw material. Such materials include europium oxide and samarium oxide. Alternatively, a compound which forms samarium oxide or europium oxide upon heating (a precursor of samarium or europium oxide) may be added to the raw material of aluminum nitride. The precursor includes europium nitrate, samarium nitrate, europium sulfate, samarium sulfate, europium oxalate and samarium oxalate. The precursors may be added as powder. Alternatively, each precursor may be dissolved into a solvent to obtain solution, which is then added to the raw material. It is possible to uniformly disperse europium or samarium in the intergranular phase between aluminum nitride grains by dissolving the precursors in a solvent.

[0042] The sintered body may be shaped by any known methods including dry press, doctor blade, extrusion, casting and tape forming methods.

[0043] In a formulating step, powder of aluminum nitride raw material may be dispersed into a solvent and the compound of a rare earth element described above may be added in a form of oxide powder or solution. In a mixing step, it is possible to simply agitate the formulation. When the raw powder contains aggregates, it is possible to use a mixing and grinding machine, such as a pot mill, trommel and attrition mill, for grinding the aggregates. When using an additive which is soluble in a solvent for grinding, it is enough to carry out the mixing and grinding step for the minimum time required for the grinding the grains. Further, a binder component, such as polyvinyl alcohol, may be added.

[0044] The solvent used for the mixing step may be volatilized, preferably by spray dry method. After carrying out vacuum drying process, the grain distribution of the dried grains may preferably be adjusted by passing the grains through a mesh.

[0045] In a shaping step of the powdery material, the material may be pressed using a metal mold to provide a disk-shaped body. The pressure for pressing raw material is not particularly limited, as long as the shaped body may be handled without causing any fracture. The pressure may preferably be not lower than 100 kgf/cm². The powdery material may be supplied into a die for hot pressing without particularly shaping the powdery material.

[0046] The sintered body may preferably be produced by sintering at ambient pressure or hot pressing, preferably at a pressure of 50 kgf/cm² or larger.

[0047] The material according to the invention may preferably be used for various members in a system for producing semiconductors, such as systems for treating silicon wafers and for manufacturing liquid crystal displays.

[0048] The member for producing semiconductors may preferably be an anti-corrosion member, such as a susceptor for a system for producing semiconductors. The inventive member is also suitable for an article having the above anti-corrosion member and a metal member embedded within the anti-corrosion member. Such anti-corrosion member includes a susceptor, a ring and a dome set in a system for producing semiconductors. A resistance heating element, an electrode for an electrostatic chuck and an electrode for generating high-frequency wave may be embedded within the susceptor.

[0049] The aluminum nitride material according to the invention has a low electrical resistivity as described above, and therefore suitable as a substrate of an electrostatic chuck. It is possible to embed an electrostatic chuck electrode, as well as a heating element, an electrode for generating plasma or the like, in the substrate.

EXAMPLES

[0050] Aluminum nitride sintered bodies were produced and the properties were evaluated as follows.

[0051] (1a) Production of Mixed Powder of Aluminum Nitride/Europium Oxide

[0052] Commercial AlN powder produced by reduction nitriding (an oxygen content of 0.87 weight percent) was used. Commercial powder of europium oxide with a purity of 99.9 percent or more and a mean grain diameter of 1.1 μm was used.

[0053] Each powder was weighed as shown in table 1. Weighed powders were then subjected to wet blending using isopropyl alcohol as a solvent, a nylon pot and nylon media for 4 hours to obtain slurry. After the blending, the slurry was collected and dried at 110° C. The thus dried powder was then subjected to heat treatment in an atmosphere at 450° C. for 20 hours to remove carbon content contaminated during the wet blending to produce raw mixed powder. The compositions (molar percent) were calculated ignoring the contents of impurities in AlN, Eu₂O₃ and Al₂O₃ powders.

[0054] (1b) Production of Mixed Powder of Aluminum Nitride/Europium Oxide/Samarium Oxide.

[0055] Commercial AlN powder produced by reduction nitriding (an oxygen content of 0.87 weight percent) was used. Commercial powder of europium oxide with a purity of 99.9 percent or more and a mean grain diameter of 1.1, m was used. Commercial powder of samarium oxide with a purity of not lower than 99.9 percent and a mean grain diameter of 1.1 μm was used.

[0056] The powdery raw materials were weighed as shown in table 1, and then formulated as described in the step (1a) to obtain formulated powder. The compositions (molar percent) of the formulated powder were calculated ignoring the contents of impurities in AlN, Eu₂O₃, Sm₂O₃ and Al₂O₃ powders.

[0057] (2) Shaping and sintering steps Each formulated powder obtained in (1) was then shaped by means of uniaxial pressing at a pressure of 200 kgf/cm² to obtain a disk-shaped body with a diameter φ of 50 mm or 100 mm and a thickness of 20 mm, which was then contained within a mold made of graphite for sintering.

[0058] Each shaped body was sintered by hot pressing at a pressure of 200 kgf/cm², at a temperature and a holding time period shown in table 1 and then cooled. During the sintering, the shaped body was set in vacuum from room temperature to 1000° C. and then nitrogen gas was introduced at a pressure of 1.5 kgf/cm² from 1000° C. to each sintering temperature.

[0059] (3) Evaluation

[0060] The thus obtained sintered bodies were processed and then subjected to the following evaluations.

[0061] (Contents of Eu, Sm, O and C)

[0062] The contents are measured by chemical analysis.

[0063] (Content of Eu₂O₃)

[0064] The above obtained “content of Eu” is converted to the content of Eu₂O₃. This value is represented as “converted content of Re₂O₃ in table 1 (examples 1 to 6).

[0065] (Contents of Eu₂O₃ and Sm₂O₃)

[0066] The above obtained “content of Eu” and “content of Sm” are converted to the contents of the oxides and represented as “content of Re₂O₃ in table 1.

[0067] (Content of Al₂O₃)

[0068] The oxygen content in Re₂O₃ is subtracted from a total content of oxygen in the sintered body to calculate the remaining oxygen. The content of Al₂O₃ is calculated under the provision that all the remaining oxygen atoms constitute Al₂O₃.

[0069] (Bulk Density, Open Porosity)

[0070] They are measured by Archimedes method using pure water as a medium.

[0071] (Volume Resistivity)

[0072] It is measured by a method according to “JIS C 2141” under vacuum from room temperature to about 400° C. The test sample has the following parts: a plate with 50 mm×50 mm×1 mm or φ 50 mm×1 mm; a main electrode with a diameter of 20 mm; a guard electrode with an inner diameter of 30 mm and outer diameter of 40 mm; and an applying electrode with a diameter of 40 mm. The electrodes are formed of silver. The applied voltage is 500 V/mm. A current is read one minute after the application of voltage so that the volume resistivity is calculated.

[0073] (Activation Energy)

[0074] An activation energy (Ea) of temperature dependency of volume resistivity from room temperature to 300° C. is calculated according to the following equation.

ln σ=A−Ea/(kT)

[0075] σ: electrical conductivity=1/ρ ρ: volume resistivity

[0076] k: Boltzman's constant T: absolute temperature

[0077] A: a constant

[0078] (α) The voltage applied on the sample is changed from 10 to 500 V/mm. The value of leakage current is plotted. The leakage current “I” is assigned to the vertical axis on logarithm scale, and the applied voltage “V” is assigned to the horizontal axis on logarithm scale. The plots of the examples are fitted to a linear function in a graph based on least square method to calculate the gradient of the linear function, and the gradient is shown in the tables as “α”.

[0079] (Thermal Conductivity)

[0080] It is measured by laser flash method.

[0081] (Mean Grain Diameter of AlN Grains)

[0082] The sintered body is polished and observed using an electron microscope to measure the grain diameter values of AlN grains. An average of 30 values is calculated.

[0083] (Crystalline Phase)

[0084] It is determined by using an X-ray diffraction system under the following conditions: CuKα, 50 kV, 300 mA, and 2θ=10 to 70°; a rotating anode type X-ray diffraction system “RINT” supplied by “Rigaku Denki”. TABLE 1 powdery raw material AlN properties of sintered body powder sintering Chemical Analysis data Re203 Al203 oxygen condition Eu Sm O C converted converted Re203/ content Eu203 Sm203 Al203 Maximum Content Content content content content content Al203 Examples Wt mol mol mol Temperature wt Wt wt wt mol mol molar 1-11 % % % % ° C. % % % % % % ratio 1 0.87 0.06 — — 1900 0.39 — 0.71 0.027 0.053 0.554 0.095 2 0.87 0.12 — — 1900 0.74 — 0.74 0.030 0.101 0.536 0.188 3 0.87 0.03 — 0.38 1900 0.22 — 1.16 0.027 0.031 0.990 0.031 4 0.87 0.12 — 1.27 1900 0.71 — 2.16 0.029 0.098 1.796 0.055 5 0.87 0.06 — 0.64 1900 0.37 — 1.46 0.029 0.051 1.218 0.042 6 0.87 0.34 — 3.70 1900 1.69 — 4.01 0.029 0.241 3.384 0.071 7 0.87 0.06 0.06 1.27 1900 0.35 0.33 2.17 0.027 0.094 1.802 0.052 8 0.87 0.08 0.03 1.27 1900 0.51 0.22 2.18 0.028 0.101 1.800 0.056 9 0.87 0.04 0.35 0.67 1900 0.14 1.91 1.26 0.050 0.284 0.811 0.350 10  0.87 0.38 0.16 5.94 1950 0.86 0.50 4.34 0.026 0.194 3.706 0.052 11  0.87 0.27 0.27 5.94 1950 0.60 0.59 4.91 0.026 0.173 4.333 0.040 Comparative 0.97 — — — 2000 — — 0.84 — — — — Example 1

[0085] TABLE 2 Properties of sintered body non mean grain Exam- open bulk Volume resistivity activation linear Thermal diameter of ples porosity density (Ω · cm) energy index Conductivity AlN 1-11 % g/cm³ 25° C. 300° C. (eV) α W/mK μm crystalline phase (except AlN) 1 0.01 3.26 1.1E+12 9.9E+08 0.40 1.75 91 6 EuAl11018(EuAl12019), EuAl204 2 0.01 3.27 1.6E+12 1.3E+09 0.42 1.70 106  5 EuAl11018(EUAl12019), EuAl204 3 0.02 3.26 9.8E+12 4.8E+07 0.65 1.35 80 6 EuAl11018(EuAl12019), Al506N 4 0.00 3.27 1.5E+12  <1E+7   0.62* 1.30 74 7 EuAl11018(EuAl12019), Al506N 5 0.00 3.27 7.1E+12 1.0E+07 0.76 1.24 81 6 EuAl11018(EuAl12019), Al506N 6 0.00 3.32 4.1E+11  <1E+7   0.66* 1.38 69 6 EuAl11018(EuAl12019), Al506N 7 0.01 3.28 1.2E+12 2.2E+09 0.35 1.10 78 6 ReAl11018(ReAl12019), Al506N 8 0.01 3.28 8.2E+12 7.3E+07 0.66 1.05 80 5 ReAl11018(ReAl12019), Al506N 9 0.01 3.30 7.9E+10 1.0E+08 0.39 1.39 84 6 ReAl11018(ReAl12019), EuAl204, SmAl03 10  0.01 3.31 1.3E+12 1.7E+08 0.51 1.04 63 8 ReAl11018(ReAl12019), Al506N 11  0.03 3.31 4.7E+10 5.8E+07 0.34 1.20 59 8 ReAl11018(ReAl12019), Al506N Compa- 0.04 3.26 5.2E+09  <1E+7  0.71 3.30 97 8 Y4Al209 rative exam- ple 1

[0086] In examples 1 and 2, Eu₂O₃ alone is added to aluminum nitride. The volume resistivity is reduced to a value of 10¹³ Ω·cm or lower and an europium-aluminum composite oxide phase is confirmed, by adding Eu₂O₃. The activation energy of temperature dependency of volume resistivity was also low.

[0087] In the examples 3, 4, 5 and 6, the volume resistivity at room temperature is reduced to a value not higher than 10¹³ Ω·cm and the non linear constant “α” is reduced to a value not higher than 1.4, by adding Al₂O₃ and reducing a molar ratio Eu₂O₃/Al₂O₃.

[0088] Also in examples 7, 8, 10 and 11, the volume resistivity at room temperature is reduced to a value not higher than 10¹³ Ω·cm by adding Al₂O₃ and reducing a molar ratio Re₂O₃/Al₂O₃. The non-linear constant “α” is reduced to a value not higher than 1.3, by increasing a molar ratio Eu₂O₃/Sm₂O₃ to 1 or higher.

[0089] In comparative example 1, Y₂O₃ is added as an aid without adding Eu₂O₃ and Sm₂O₃. “α” is proved to be substantially large.

[0090]FIG. 1 is a phase diagram of Eu₂O₃-Al₂O₃ system. The presence of EuAl₁₁O₁₈ phase is confirmed in the phase diagram (Phase Diagrams for Ceramists 1975 Supplement, FIG. 4367),

[0091]FIG. 2 is an X-ray diffraction profile of a sample according to example 6. EuAl₁₁O₁₈ or EuAl₁₂O₁₉ phase and Al₅O₆N phase are confirmed other than AlN phase. Since the JCPDS card of EuAl₁₁O₁₈ phase is not presented, the peak profile of CeAl₁₁O₁₈ phase is shown instead. Although the positions of peaks of the sample according to example 6 are substantially identical with those of the card of EuAl₁₂O₁₉ phase, a few peaks (for example near 16°) of the sample are not shown in the card of EuAl₁₂O₁₉ phase. Characteristic diffraction peak tops of an europium-aluminum composite oxide phase are found at an angle of diffraction in a range of 18.5 to 19.0°.

[0092]FIG. 3 is an X-ray diffraction profile of a sample of example 11. EuAl₁₁O₁₈, EuAl₁₂O₁₉ or SmAl₁₁O₁₈ phase and Al₅O₆N phase are detected other than AlN phase.

[0093]FIG. 4 shows an backscattering electron image of the sintered body according to example 6, and FIG. 5 is an image showing distribution of elements in the sintered body taken by EPMA over the same visual field as FIG. 4. The blackish regions correspond with AlN grains and whitish regions correspond with intergranular phase. Elements having large atomic weights present in the whitish regions. As the brightness of the region is higher, a larger amount of elements having larger atomic weights is present in the region. The intergranular regions are interconnected with each other and consist mainly of Eu, O and Al. It is already described that the intergranular phase has a crystalline phase of EuAl₁₁O₁₈ or EuAl₁₂O₁₉ phase by means of X-ray diffraction analysis.

[0094]FIG. 6 is a current distribution analytic images of the sintered body of example 6 observed using an atomic force microscope (AFM). The test sample had a shape of a plate with dimensions of about 3 mm×5 mm×0.5 mm (thickness). The face of the sample for current distribution analysis was polished. The analysis was carried out using a model “SPM stage D 3100” (probe type “DDESP”) supplied by Digital Instruments. The measurement was performed on contact AFM current measurement mode. A direct current (DC) bias was applied on the lower face of the sample and the current distribution on the polished face was measured using the probe. As the image is whitish and brighter, the current value is larger and the conductivity is higher. As can be seen from the image, it is proved that the intergranular phase functions as a conductive phase.

[0095]FIG. 7 is a back scattering electron image of the sintered body of example 11, and FIG. 8 is an image showing distribution of elements in the sintered body taken by EPMA over the same visual field as FIG. 7. It is proved that the intergranular regions are interconnected with each other and the distributions of Eu and Sm are identical. The results also correspond with the profile of X-ray diffraction analysis.

[0096]FIG. 9 is a graph showing a current value after a voltage of 50 to 500 V/mm is applied on the sample of example 5 for about 60 seconds. FIG. 10 is a graph showing a current value after a voltage of 50 to 500 V/mm is applied on the sample of example 11 for about 60 seconds. The linear functions in the figures show the results of method of least squares applying a fitting function of I=kV^(α). The “α” value was 1.24 in the example 5 and 1.20 in the example 11, exhibiting nearly ohmic properties. It is thus proved that the inventive material has a small dependency of current value on an applied voltage.

[0097] As described above, the present invention provides a novel aluminum nitride material of aluminum nitride base and having a low volume resistivity at room temperature. 

1. An aluminum nitride material comprising aluminum nitride as a main component and europium in a content of 0.03 mole percent or more calculated as the oxide, said material comprising aluminum nitride and europium-aluminum composite oxide phases.
 2. The material of claim 1 having a volume resistivity at room temperature of 10¹³ Ω·cm or lower at an applied voltage of 500 V/mm.
 3. The material of claim 1, wherein said europium-aluminum composite oxide phase includes each or both of EuAl₁₁O₁₈ and EuAl₁₂O₁₉ phases.
 4. The material of claim 1, wherein a molar ratio of a content of europium calculated as the oxide to that of alumina (Eu₂O₃/Al₂O₃) is 0.04 to 0.2.
 5. The material of claim 1, wherein said europium-aluminum composite oxide phase comprises network microstructure.
 6. The material of claim 1, wherein said aluminum nitride phase comprises grains having a mean grain diameter of 4 μm or more.
 7. The material of claim 1, having an activation energy of temperature dependency of volume resistivity from room temperature to 300° C. of 0.4 eV or lower.
 8. The material of claim 1 having a non linear index “α” of 1.6 or lower at “V” in a range of 50 V/mm to 500 V/mm, provided that I=kV a where “V” represents a voltage applied on said material, “I” represents a leakage current at a voltage of “V” and “k” represents a constant.
 9. A member used for a system for producing semiconductors, said member comprising the material of claim
 1. 10. An aluminum nitride material comprising aluminum nitride as a main component and europium and samarium in a total content of 0.09 mole percent or more calculated as the oxides, said material comprising aluminum nitride phase and a composite oxide phase containing at least europium and aluminum.
 11. The material of claim 10 having a volume resistivity at room temperature of 10¹³ Ω·cm or lower at an applied voltage of 500 V/mm.
 12. The material of claim 10, wherein said composite oxide phase containing at least europium and aluminum has a peak top in a range of 18.5 to 19.0° in an X-ray diffraction chart.
 13. The material of claim 10, wherein said composite oxide phase containing at least europium and aluminum comprises at least one of an europium-aluminum composite oxide phase and an europium-samarium-aluminum composite oxide phase.
 14. The material of claim 10, wherein a molar ratio of a total content of europium and samarium calculated as the oxides to that of alumina [(Eu₂O₃+Sm₂O₃)/Al₂O₃] is 0.4 or lower.
 15. The material of claim 10, wherein said aluminum nitride phase comprises grains having a mean grain diameter of 4 μm or more.
 16. The material of claim 10, having an activation energy of temperature dependency of volume resistivity from room temperature to 300° C. of 0.4 eV or lower.
 17. The material of claim 10 having a non linear index “α” of 1.6 or lower at “V” in a range of 50 V/mm to 500 V/mm, provided that I=kV^(α) where “V” represents a voltage applied on said material, “I” represents a leakage current at a voltage of “V” and “k” represents a constant.
 18. A member used for a system for producing semiconductors, said member comprising the material of claim
 10. 